1999. 11. 30
1/1
SEMICONDUCTOR
TECHNICAL DATA
BFS20/BF599
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
40
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=2mA, I
B
=0
25
-
-
V
Emitter-Base
Breakdown Voltage
BFS20
V
(BR)EBO
I
E
=10 A, I
C
=0
4
-
-
V
BF599
5
Collector Cut-off Current
BFS20
I
CBO
V
CB
=20V, I
E
=0
-
-
100
nA
V
CB
=20V, I
E
=0, Ta=150
-
-
10
A
BF599
V
CB
=40V, I
E
=0
-
-
100
nA
DC Current Gain
h
FE
V
CE
=10V, I
C
=7mA
40
-
-
-
Base-Emitter Voltage
BFS20
V
BE(ON)
V
CE
=10V, I
C
=7mA
-
750
900
mV
BF599
-
750
-
Transition Frequency
BFS20
f
T
V
CE
=10V, I
C
=7mA, f=100MHz
275
550
-
MHz
BF599
-
550
-
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
-
0.35
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
BFS20
V
EBO
4
V
BF599
5
Collector Current
I
C
25
mA
Emitter Current
I
E
-25
mA
Collector Power Dissipation
P
C
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65 150
TYPE
MARK
BFS20
G1
BF599
G2
MARK SPEC
Type Name
Marking
Lot No.
G1
Type Name
Lot No.
G2
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